BEGIN:VCALENDAR PRODID:-//Microsoft Corporation//Outlook 16.0 MIMEDIR//EN VERSION:2.0 METHOD:PUBLISH X-MS-OLK-FORCEINSPECTOROPEN:TRUE BEGIN:VTIMEZONE TZID:W. Europe Standard Time BEGIN:STANDARD DTSTART:16011028T030000 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=10 TZOFFSETFROM:+0200 TZOFFSETTO:+0100 END:STANDARD BEGIN:DAYLIGHT DTSTART:16010325T020000 RRULE:FREQ=YEARLY;BYDAY=-1SU;BYMONTH=3 TZOFFSETFROM:+0100 TZOFFSETTO:+0200 END:DAYLIGHT END:VTIMEZONE BEGIN:VEVENT CLASS:PUBLIC CREATED:20260523T015818Z DESCRIPTION:Commercially available GaN HEMTs built using a silicon substrat e are very difficult to scale to voltages beyond 900V due to the need for very thick buffer layers. Due of this\, applications needing wide-bandgap power devices with 1200 V rating and beyond have been constrained to using SiC switches. However\, GaN enables much higher switching frequency compa red to SiC and can provide a pathway to meeting the increasing power densi ty required by applications\, such as AI data centers\, while maintaining high efficiency. \n \nGaN HEMTs built with Power Integrations’ proprieta ry GaN-on-sapphire technology offer the unique advantage of realizing a ve ry high voltage rating in a practical device\, making them a readily avail able and compelling alternative to SiC. We describe the reliability and ro bustness of industry-first GaN power switches with rated voltages of 1250V and 1700V and illustrate at the system level their suitability to meet th e requirements of emerging HVDC AI data center architecture.\n \n1250V and 1700V GaN Empowers 800VDC AI Data Center Architecture \n \nSpeaker:\nKamal Varadar ajan\nSr. Principal Device Engineering Manager\, Power Integrations\n \nKa mal Varadarajan holds a Ph.D. in Electrical Engineering from Rensselaer Po lytechnic Institute\, Troy\, NY-USA. He has worked in the power semiconduc tor field for over 20 years and is currently employed as a Senior Manager working on GaN technology development at Power Integrations in San Jose\, CA.\n \n DTEND;TZID="W. Europe Standard Time":20260610T104500 DTSTAMP:20260523T015818Z DTSTART;TZID="W. Europe Standard Time":20260610T102500 LAST-MODIFIED:20260523T015818Z LOCATION:Messe Nürnberg\; Hall 5\, Stand 320 PRIORITY:5 SEQUENCE:0 SUMMARY;LANGUAGE=en-us:PCIM 2026 - Stage Program - 1250V and 1700V GaN Empo wers 800VDC AI Data Center Architecture TRANSP:OPAQUE UID:040000008200E00074C5B7101A82E00800000000100830051CEADC01000000000000000 010000000F3FA328F696F9643B0F788C0ADFB2A17 X-ALT-DESC;FMTTYPE=text/html:

Commercially available GaN HEMTs built usin g a silicon substrate are very difficult to scale to voltages beyond 900V due to the need for very thick buffer layers. Due of this\, applications n eeding wide-bandgap power devices with 1200 V rating and beyond have been constrained to using SiC switches. However\, GaN enables much higher switc hing frequency compared to SiC and can provide a pathway to meeting the in creasing power density required by applications\, such as AI data centers\ , while maintaining high efficiency. \;

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Ga N HEMTs built with Power Integrations’\; proprietary GaN-on-sapphire technology offer the unique advantage of realizing a very high voltage rat ing in a practical device\, making them a readily available and compelling alternative to SiC. We describe the reliability and robustness of industr y-first GaN power switches with rated voltages of 1250V and 1700V and illu strate at the system level their suitability to meet the requirements of e merging HVDC AI data center architecture.

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< a href="https://pcim.mesago.com/nuernberg/en/expo/visitors/stages-focustop ics/stages/program.html?gln_ids=c2f64034d0-1lxbtulgvmy-4dabe1ddaa9d#/event .detail.html/1250v-and-1700v-gan-empowers-800vdc-ai-data-center-architectu re_en-GB_100626-1025.html?program=ai-data-centers-stage&\;day=2026-06-1 0">1250V and 1700V GaN Empowers 800VDC AI Data Center Architecture

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Speaker:

Kamal Varadarajan< /o:p>

Sr. Principal Device Engineering Manager\, Power Integrations

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Kamal Varadarajan holds a Ph.D. in Electrical Eng ineering from Rensselaer Polytechnic Institute\, Troy\, NY-USA. He has wor ked in the power semiconductor field for over 20 years and is currently em ployed as a Senior Manager working on GaN technology development at Power Integrations in San Jose\, CA.

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